120V High-side and Low-side Gate Driver
- Parameters
- Features
- Description
Part Number | SQ55664NSXD |
---|
Vin_min (V) | 8 |
---|
Vin_max (V) | 17 |
---|
Idrive_max (A) | 4 |
---|
MOSFET RON HS + LS(mΩ) typ. | |
---|
Features / Special Function | |
---|
Application | Telecom/Datacom/Half-bridge and Full-bridge Converters |
---|
Package | DFN4×4-8 |
---|
- High Voltage Range up to 120 V
- 4A Sink and 4A Source Current
- VCC Operation Range from 8 V to 17 V
- CMOS/TTL Compatible
- 7.2ns Rise and 5.5ns Fall Time with 1000pF Load
- Fast Propagation Delay Time
- 5ns Delay Matching
- DFN4×4-8 package
The SQ55664N is a high voltage floating driver specifically designed to drive both high and low side channels directly. Its floating channel can drive a 120V N-channel MOSFET in a high-side configuration. The input logic is compatible with standard CMOS or TTL systems.
The device includes under-voltage detectors on the VCC and VB rails for reliable operation.
The SQ55664N is available in a compact DFN 4mm×4mm-8 pin package.
Evaluation Board
Photo of evaluation board
Photo of evaluation board
Photo of evaluation board
The EVB_SQ55664NSXD is intended for evaluating 120V High-side and Low-side Gate Driver SQ55664NSXD.
Similar Products
SY21602DFC
Low Voltage H-Bridge IC
SY21603QIC
High Efficiency H-Bridge Motor Driver IC
SY21634FCC
Medium Voltage H-Bridge IC